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IHW40T120
Soft Switching Series
Low Loss DuoPack : IGBT in TrenchStop(R) and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C
* * *
* * * * *
Short circuit withstand time - 10s Designed for : - Soft Switching Applications - Induction Heating TrenchStop(R) and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) Very soft, fast recovery anti-parallel EmConTM HE diode Low EMI Qualified according to JEDEC1 for target applications Application specific optimisation of inverse diode *Pb-free lead plating; RoHS compliant
G
E
PG-TO-247-3
Type IHW40T120
VCE 1200V
IC 40A
VCE(sat),Tj=25C 1.8V
Tj,max 150C
Marking H40T120
Package PG-TO247-3
Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Short circuit withstand time
2)
Symbol VCE IC
Value 1200 75 40
Unit V A
ICpuls IF
105 105
31 19.8 IFpuls IFSM 47 A 78 200 160 20 10 270 -40...+150 -55...+150 V s W C
VGE tSC Ptot Tj Tstg
VGE = 15V, VCC 1200V, Tj 150C Power dissipation, TC = 25C Operating junction temperature Storage temperature
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.3 Sep 08
Power Semiconductors
IHW40T120
Soft Switching Series
Soldering temperature, 1.6mm (0.063 in.) from case for 10s 260
Power Semiconductors
2
Rev. 2.3 Sep 08
IHW40T120
Soft Switching Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient RthJC RthJCD RthJA 0.45 1.1 40 K/W Symbol Conditions Max. Value Unit
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =1.5mA VCE(sat) V G E = 15 V, I C =40A T j = 25C T j = 125 C T j = 150 C Diode forward voltage VF VGE=0V, IF=18A T j = 25C T j = 125 C T j = 150 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =1.5mA,V C E =V G E V C E = 12 00 V, VGE=0V T j = 25C T j = 150 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Ciss Coss Crss QGate V C E =25V, VGE=0V, f=1MHz V C C = 96 0 V, I C =40A V G E =15V V G E =15V,t S C 1 0 s V C C = 600 V, T j = 2 5C 2500 130 110 203 13 210 nC nH A pF IGES gfs RGint V C E = 0 V , V G E =20V V C E =20V, I C =40A 21 6 0.4 4.0 600 nA S 5.0 1.65 1.7 1.7 5.8 6.5 mA 2.15 1.8 2.1 2.3 2.3 1200 V Symbol Conditions Value min. Typ. max. Unit
Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC)
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 3 Rev. 2.3 Sep 08
Power Semiconductors
IHW40T120
Soft Switching Series
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current trr Qrr Irrm T j = 25C , V R = 80 0 V , I F =18A, d i F /d t= 800A/s 195 1880 20.2 ns nC A td(on) tr td(off) tf Eon Eoff Ets T j = 25C , V C C = 60 0 V, I C =40A, V G E = 0 /1 5 V, R G = 1 5 , L 2 ) =1 80nH, C 2 ) =39pF Energy losses include "tail" and diode reverse recovery. 48 34 480 70 3.3 3.2 6.5 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current trr Qrr Irrm T j = 150 C V R = 80 0 V , I F =18A, d i F /d t= 800A/s 300 3540 25.3 ns nC A td(on) tr td(off) tf Eon Eoff Ets T j = 150 C V C C = 60 0 V, I C =40A, V G E = 0 /1 5 V, R G = 1 5 , L 1 ) =1 80nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. 52 40 580 120 5.0 5.4 10.4 mJ ns Symbol Conditions Value min. typ. max. Unit
2) 1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 4 Rev. 2.3 Sep 08
Power Semiconductors
IHW40T120
Soft Switching Series
100A
100A TC=80C
tp=3s 10s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
80A
TC=110C
10A 50s 150s 1A 500s
60A
40A
Ic
20A
Ic
0,1A 1V
20ms DC
0A 10Hz
100Hz
1kHz
10kHz
100kHz
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 15)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V)
70A
250W
60A
IC, COLLECTOR CURRENT
POWER DISSIPATION
200W
50A 40A 30A 20A 10A 0A 25C
150W
Ptot,
100W
50W
0W 25C
50C
75C
100C
125C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
5
Rev. 2.3 Sep 08
IHW40T120
Soft Switching Series
100A 90A 100A 90A
IC, COLLECTOR CURRENT
70A 60A 50A 40A 30A 20A 10A 0A 0V
15V 13V 11V 9V 7V
IC, COLLECTOR CURRENT
80A
VGE=17V
80A 70A 60A 50A 40A 30A 20A 10A 0A
VGE=17V 15V 13V 11V 9V 7V
1V
2V
3V
4V
5V
6V
0V
1V
2V
3V
4V
5V
6V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C)
100A 90A
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
3,5V 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50C IC=40A IC=25A IC=10A IC=80A
IC, COLLECTOR CURRENT
80A 70A 60A 50A 40A 30A 20A 10A 0A 0V 2V 4V 6V 8V 10V 12V TJ=150C 25C
0C
50C
100C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
6
Rev. 2.3 Sep 08
IHW40T120
Soft Switching Series
td(off)
1000 ns td(off) 100 ns tf td(on) tr 10 ns
t, SWITCHING TIMES
100ns
tf
td(on) 10ns tr
1ns
t, SWITCHING TIMES
20A 40A 60A
0A
1 ns
5
15
25
35
45
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=15, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V 6V 5V 4V min. 3V 2V 1V 0V -50C max. typ.
t, SWITCHING TIMES
100ns tf td(on) tr
10ns
0C
50C
100C
150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.5mA)
Power Semiconductors
7
Rev. 2.3 Sep 08
IHW40T120
Soft Switching Series
*) Eon and Etsinclude losses due to diode recovery
E, SWITCHING ENERGY LOSSES
20,0mJ
Ets*
E, SWITCHING ENERGY LOSSES
25,0mJ
15 mJ
*) Eon and Ets include losses due to diode recovery
Ets*
10 mJ Eon* Eoff 5 mJ
15,0mJ Eon* 10,0mJ Eoff 5,0mJ
0,0mJ 10A
20A
30A
40A
50A
60A
70A
0 mJ
5
15
25
35
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=15, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E)
15mJ
*) E on and E ts include losses due to diode recovery
15mJ
*) Eon and Ets include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
E ts* 10mJ
E, SWITCHING ENERGY LOSSES
10mJ Ets*
E off 5mJ E on*
5mJ E off Eon*
0mJ
50C
100C
150C
0mJ 400V
500V
600V
700V
800V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150C, VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E)
Power Semiconductors
8
Rev. 2.3 Sep 08
IHW40T120
Soft Switching Series
Ciss
VGE, GATE-EMITTER VOLTAGE
15V
1nF
240V 10V
960V
c, CAPACITANCE
Coss 100pF Crss
5V
0V
0nC
50nC
100nC
150nC
200nC
250nC
10pF
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=40 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
SHORT CIRCUIT WITHSTAND TIME
15s
IC(sc), short circuit COLLECTOR CURRENT
300A
10s
200A
5s
100A
tSC,
0s
12V
14V
16V
0A
12V
14V
16V
18V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C)
VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C)
Power Semiconductors
9
Rev. 2.3 Sep 08
IHW40T120
Soft Switching Series
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W D=0.5
0
D=0.5 0.2 0.1 0.05
R,(K/W) 0.159 0.133 0.120 0.038
10 K/W
-1
0.2 0.1 10 K/W
-1
10 K/W
-2
0.02 0.01 single pulse
, (s) -1 1.10*10 -2 1.56*10 -3 1.35*10 -4 1.51*10
R2
0.05 0.02 0.01 single pulse
R,(K/W) 0.2113 0.2922 0.3666 0.2248
R1
, (s) -2 7.23*10 -3 8.13*10 -3 1.09*10 -4 1.55*10
R2
R1
C 1= 1/R 1
C 2= 2/R 2
C1=1/R1
C2=2/R2
10 K/W 10s
-3
100s
1ms
10ms
100ms
10 K/W 10s
-2
100s
1ms
10ms
100ms
tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T)
600ns
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME
TJ=150C
3C
500ns 400ns 300ns 200ns 100ns 0ns 200A/s
2C
TJ=25C
TJ=150C TJ=25C
400A/s 600A/s 800A/s
1C
0C 200A/s
400A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E)
Power Semiconductors
10
Rev. 2.3 Sep 08
IHW40T120
Soft Switching Series
TJ=150C
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
REVERSE RECOVERY CURRENT
TJ=25C
30A 25A 20A 15A 10A 5A 0A
-300A/s
TJ=25C
TJ=150C
-200A/s
-100A/s
Irr,
200A/s
400A/s
600A/s
800A/s
-0A/s 200A/s
400A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E)
40A
TJ=25C 150C
2,0V IF=30A 1,5V 15A 8A 5A 1,0V
30A
20A
10A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
0,5V
0A
0V
1V
2V
0,0V
-50C
0C
50C
100C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
11
Rev. 2.3 Sep 08
IHW40T120
Soft Switching Series
PG-TO247-3
M
M
MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 5.44 3 19.80 4.17 3.50 5.49 6.04
MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60
MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 0.214 3
MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102
Z8B00003327 0
0
55 7.5mm
20.31 4.47 3.70 6.00 6.30
0.780 0.164 0.138 0.216 0.238
0.799 0.176 0.146 0.236 0.248
17-12-2007 03
Power Semiconductors
12
Rev. 2.3 Sep 08
IHW40T120
Soft Switching Series
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH a nd Stray capacity C =39pF.
Power Semiconductors
13
Rev. 2.3 Sep 08
IHW40T120
Soft Switching Series
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
14
Rev. 2.3 Sep 08

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